Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes
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| Abstract: | Double magnetic tunnel junctions (DMTJs) using half-metallic Co2MnSi Heusler alloy electrodes were fabricated. Their tunnel magnetoresistance (TMR) effects were then investigated. Large TMR ratios were observed as 25% at room temperature and as 320% at 6 K. The bias voltage dependence of tunnel conductance suggests a half-metallic nature of the Co2MnSi electrode. These results show that high-quality DMTJ with half-metallic Heusler alloy electrodes was fabricated and that the DMTJ exhibited the expected performance. |
| Author:
| Ohdaira, Yusuke Oogane, Mikihiko Ando, Yasuo |
| Author Unit:
| Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Send |
| Year: | 2009 |
| Source: | Journal of Applied Physics |
| Volume-OnPage: | 10507C920 |
| Publication Date:
| Apr 2009 |
| Keyword: | |
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