Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7
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| Abstract: | The stability of the effective work function (Φeff) on La-based high-k materials was studied in detail by changing the annealing ambient and the gate dielectric stack. Φeff for a LaAlO3/SiO2/Si stack with Pt gate electrode was not affected by the annealing ambient, whereas that for a Pt gate electrode on an La2Hf2O7/SiO2/Si stack increased sharply when O2 annealing was performed after forming gas annealing (FGA). Comparison with the results for a stack without SiO2 indicates that this anomalous phenomenon in the La2Hf2O7/SiO2/Si stack is caused by oxygen-vacancy-related dipoles at La2Hf2O7/SiO2 interface produced by FGA. |
| Author:
| Suzuki, Masamichi Kinoshita, Atsuhiro Schimizu, Tatsuo Koyama, Masato |
| Author Unit:
| Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, K |
| Year: | 2009 |
| Source: | Journal of Applied Physics |
| Volume-OnPage: | 105064105 |
| Publication Date:
| Mar 2009 |
| Keyword: | |
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