Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy
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| Abstract: | We investigated at 4.2 K the differential conductance (dI/dV) versus V characteristics of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring high tunnel magnetoresistance ratios of about 700% at 4.2 K (about 180% at room temperature). We developed a tunneling model to explain the observed tunneling spectra and showed the critical role played by interface states for minority spins existing around the Fermi level of Co2MnSi electrodes facing a MgO tunnel barrier in the spin-dependent tunneling characteristics of these MTJs with half-metallic electrodes. |
| Author:
| Ishikawa, Takayuki Itabashi, Naoki Taira, Tomoyuki Matsuda, Ken-ichi Uemura, Tetsuya Yamamoto, |
| Author Unit:
| Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan |
| Year: | 2009 |
| Source: | Applied Physics Letters |
| Volume-OnPage: | 94092503 |
| Publication Date:
| Mar 2009 |
| Keyword: | |
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