Magnetic Tunnel Junctions Based on Half-Metallic Oxides
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| Abstract: | Magnetic tunnel junctions (MTJs) are key elements of spintronic devices with widespread applications in magnetic data storage
and magnetic sensors. They are based on magnetic multilayer structures and their optimization for applications requires the
nano-engineering of the interfaces in these multilayers. The key figure of merit of MTJs is the magnitude of the achievable
tunneling magneto-resistance (TMR). A promising way for improving TMR values is the use of half-metallic ferromagnets, that
is, ferromagnets in which only states of one spin direction are present at the Fermi level. We review the history and present
understanding of spin-polarized tunneling in MTJs and their improvement by using half-metallic ferromagnets. Doing so, we
give a classification of various types of half-metallic materials. Furthermore, we address the various existing definitions
of the quantity spin polarization and the experimental methods for measuring it. Promising half-metallic materials are ferromagnetic
oxides. We review the physical properties and present understanding of the most prominent representatives of this materials
class and give an overview on recent attempts to fabricate MTJs with high TMR values from these materials. Here, we particularly
focus on problems related to the nano-engineering of interfaces. |
| Author:
| Rudolf Gross |
| Year: | |
| Source: | Nanoscale Devices - Fundamentals and Applications |
| Volume-OnPage: | |
| Keyword: | |
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