Fabrication and magnetoresistance of tunnel junctions using half-metallic Fe3O4
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| Abstract: | Magnetite (Fe3O4) is believed to be half metal, providing 100% spin-polarized conduction electrons. The half-metallic nature of magnetic electrodes for tunneling junction devices is expected to induce a large magnetoresistance. We investigated the structural and chemical properties of interfaces in ferromagnet–insulator–ferromagnet (Fe3O4/MgO/Fe) tunnel junctions. Al/Ag/Fe3O4/MgO multilayers for magnetic tunnel junction have been fabricated on α-Al2O3 (001) and MgO (100) substrates by a molecular beam epitaxy system. The Fe3O4 quality was examined by reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), superconducting quantum interference device magnetometry, atomic force microscopy (AFM), and in situ x-ray photoelectron spectroscopy. RHEED and XRD results showed that the epitaxial Fe3O4 layer with a smooth surface was successfully grown on substrates. The stoichiometric Fe3O4 was confirmed by Verway transition in temperature dependence of magnetization. AFM data showed relatively smooth surface for Fe3O4 prepared at Ts=250 °C and P(O2)=3×10-3 Pa. The Fe 2p3/2 and Fe 2p1/2 peak profiles for Fe3O4 layer are little changed by overlaying MgO in the XPS measurements. These results suggest the Al/Ag/Fe3O4/MgO multilayers available for spin-dependent tunnel junction. © 2003 American Institute of Physics. |
| Author:
| Kim, Woochul Kawaguchi, Kenji Koshizaki, Naoto Sohma, Mitsugu Matsumoto, Tetsuro |
| Author Unit:
| Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology |
| Year: | 2003 |
| Source: | Journal of Applied Physics |
| Volume-OnPage: | 938032 |
| Publication Date:
| May 2003 |
| Keyword: | |
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