Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers
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| Abstract: | We have studied the effects of capping ferromagnetic Ga1-xMnxAs epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of a capping layer only 10 monolayers thick completely suppresses the enhancement of the ferromagnetism associated with low temperature annealing. This result, which demonstrates that the surface of a Ga1-xMnxAs epilayer strongly affects the defect structure, has important implications for the incorporation of Ga1-xMnxAs into device heterostructures. © 2003 American Institute of Physics. |
| Author:
| Stone, M. B. Ku, K. C. Potashnik, S. J. Sheu, B. L. Samarth, N. Schiffer, P. |
| Author Unit:
| Department of Physics and Materials Research Institute, Pennsylvania State University, University Pa |
| Year: | 2003 |
| Source: | Applied Physics Letters |
| Volume-OnPage: | 834568 |
| Publication Date:
| Dec 2003 |
| Keyword: | |
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