Suppression of hot-carrier effects in submicrometer CMOS technology
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| Abstract: | Approaches used to suppress the hot-carrier effects in submicrometer CMOS technology based on the drain engineering of the device structure and process-induced deice degradation are discussed. Different types of lightly doped drain (LDD) structures are studied. Several process-related device aging issues are discussed. Twin-Tub V CMOS technology is used as an example of how to manage the hot-carrier issues with respect to the process integration aspects |
| Author:
| Chen Min-Liang Leung Chung-Wai Cochran, W.T. Jungling, W. Dziuba, C. Yang Tungsheng |
| Author Unit:
| AT&T Bell Lab., Allentown, PA |
| Year: | 1988 |
| Source: | Electron Devices, IEEE Transactions on |
| Volume-OnPage: | 352210 |
| Publication Date:
| Dec 1988 |
| Keyword: | |
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