Charge transfer in ZnS‐type electroluminescence


下载全文(2098 KB) 资源分 38
Abstract:In this paper, a simple model for the charge transfer in thin‐film, ac‐driven electroluminescent structures of doped ZnS type is proposed. We first review the minimal assumptions needed to account for the carrier emission under high‐field conditions and its subsequent feedback on the field strength; it opens the way to a quantitative description of the field variation with time and the conduction current under arbitrary low‐frequency drive conditions and without using any adjustable parameter. The charge‐voltage relationships are also examined in detail. Conduction in the phosphor layer is assumed to originate from deep levels (traps) in the phosphor forbidden band gap, located at the insulator‐phosphor interface. These levels act for charge storage, too. When a discrete trap level is considered, field clamping in the active layer is obtained; when a smooth interface‐state energy density is assumed, deviations from the field clamping are possible and simply related to the interface parameters. Most of the work is analytical and the model is shown to exhibit the main qualitative features of nonmemory devices.
Author: Bringuier, E.
Author Unit: Laboratoire d’Optique de la Matière Condensée, Université P. et M. Curie, Tour
Year:1989
Source:Journal of Applied Physics
Volume-OnPage:661314
Publication Date: Aug 1989
Keyword:

相似文献

友情链接   |  联系我们  |  发表论文  |  论文发表  |   加入收藏

   @ 2005-2009 粤ICP备09006515号-2

QQ:790062161 TEL:15918888768